3sk41 Datasheet -

Operating the 3SK41 beyond these limits can cause permanent damage to the GaAs structure. Engineers must design biasing networks that keep the transistor well within these boundary thresholds at an ambient temperature ( Drain-Source Voltage VDScap V sub cap D cap S end-sub Gate 1-Source Voltage VG1Scap V sub cap G 1 cap S end-sub Gate 2-Source Voltage VG2Scap V sub cap G 2 cap S end-sub Drain Current IDcap I sub cap D Total Power Dissipation PDcap P sub cap D 200 to 250 Channel Temperature Tchcap T sub c h end-sub ∘Craised to the composed with power C Storage Temperature Range Tstgcap T sub s t g end-sub -55 to +125 ∘Craised to the composed with power C 4. Electrical Characteristics

Front-end amplification in FM, VHF, and UHF receivers. 3sk41 datasheet

Do you prefer components, or are surface-mount (SMD) alternatives acceptable? Operating the 3SK41 beyond these limits can cause

Specialists like RF Parts Company maintain inventories of original active components for older communication gear. Do you prefer components, or are surface-mount (SMD)

VG2S(off)cap V sub cap G 2 cap S open paren o f f close paren end-sub

Providing stable, high-frequency oscillations. 6. Alternatives and Equivalents